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    • 专利摘要:
    A method of manufacturing a device having a microelectronic component housed in a vacuum sealed housing, comprises producing a gas trap in said housing, pumping and heating the device so as to degasify elements housed in said housing. , after said pumping, hermetic sealing of the housing without using a flow. In addition, each constituent material of the device capable of degassing in the internal volume is an inorganic material, the gas trap is capable of trapping substantially only hydrogen and the heating and sealing are carried out at a temperature below 300 ° C. .
    公开号:FR3023974A1
    申请号:FR1456961
    申请日:2014-07-18
    公开日:2016-01-22
    发明作者:Jerome Favier；David Bunel
    申请人:Ulis SAS；
    IPC主号:
    专利说明:

    [0001] FIELD OF THE INVENTION The invention relates to the field of hermetic sealing of microelectronic components under high vacuum, for example microbolometer-based detectors for microbolometers. infrared imaging or thermometry.
    [0002] STATE OF THE ART For some applications, microelectronic components must operate under vacuum to achieve the required performance. This is particularly the case of uncooled detectors for infrared imaging based on bolometric micro-bridges, hereinafter referred to as "microbolometers". In the field of so-called "thermal" infrared detectors, it is in fact known to use one-dimensional or two-dimensional arrays of elements sensitive to infrared radiation, capable of operating at ambient temperature.
    [0003] A thermal infrared detector traditionally uses the variation of the electrical resistivity of a thermometric material, or also known as a "bolometric", as a function of its temperature. The unit sensitive elements of the detector, or "bolometers", usually take the form of membranes, each comprising a layer of thermometric material, suspended above a substrate, generally made of silicon, by support arms of high thermal resistance. . These membranes, collectively referred to as the "retina", use, in particular, an absorption function of the incident infrared radiation, a function for converting the power of the radiation absorbed into heat output, and a thermometric function for converting the power. heat produced in a variation of the resistivity of the thermometric material, these functions being able to be implemented by one or more distinct elements. Furthermore, the support arms of the membranes are also electrically conductive and connected to the thermometric layer thereof, and it is usually formed in the substrate above which the membranes are suspended, sequential addressing and polarization means. thermometric elements of the membranes, and means for forming electrical signals usable in video formats.
    [0004] Such a detector is for example described in the document: "Uncooled amorphous silicon technology enhancement for 25, a pixel pitch achievement"; E. Mottin et al, Infrared Technology and Application XXVIII, SPIE, vol. 4820E.
    [0005] In order to render negligible the gas convection thermal losses which would limit the quality of the detection, the sensitive retina is usually integrated into a housing, or enclosure, sealed under very low pressure. The box is provided with a window transparent to the radiation of interest, usually between 8 and 14 micrometers in wavelength. Alternatively, each bolometer is integrated in a hermetic micro-box provided with such a window. The pressure level in the case is typically adjusted so that the convective losses are lower than the heat conduction losses via the support arms, thus ensuring quality detection. To do this, the pressure of the gases in the housing is usually less than or equal to 10 -2 mbar, and preferably less than 10 -4 mbar.
    [0006] However, obtaining such a level of pressure requires special techniques when hermetically sealing the housing. In addition, it is observed that some materials degass after sealing in the internal volume, or cavity, delimited by the housing. It is therefore also necessary to ensure the maintenance of the low initial level of pressure in the housing throughout the life of the detector, typically 20 years, despite the degassing of the surfaces and internal elements to the housing. Referring to the example of FIG. 1, the vacuum sealing of a bolometric detection device usually implements the following subsets: a base 10 comprising a bottom 12 and side walls 14, made in one holding, the bolometric detector 16, usually consisting of the integrated retina integrated on the reading substrate, and a cover transparent to infrared radiation 18, or "window", playing both a role of mechanical protection, hermetic closure of the base 10 and transparency to infrared radiation. Finally, a gas trap 20 or "getter" is also housed in the housing to maintain a sufficient vacuum level despite the degassing of the elements in communication with the internal volume 22 of the housing 24 defined by the base 10 and the window 18. The base 10 is usually composed of an assembly of predominantly metallic or ceramic materials, and also realizes the electrical interface of the detector with the outside of the case by means of a connector 26. The component 16 is fixed at bottom of the housing, for example by gluing, and then connected to the connection pads 28 reserved for this purpose in the housing 24 by a wire cabling 30 known in itself from the state of the art.
    [0007] The window 18 is assembled on the base 10 directly, or indirectly by means of an intermediate piece, the assembly being made by soldering without flux, the operating conditions of which limit the degassing of the sub-assemblies just described during the sealing the window on the base. As is known per se, brazing without flux requires the presence of unoxidized metal layers on the window 18 and the base 10, at the surfaces intended for the hermetic junction of these parts. The metal layers are usually made of one or more layers, the last at least consists of a noble metal such as gold or more rarely platinum. Brazing without flux, which makes it possible to join metal elements together by atomic diffusion by means of a mechanical action, or more usually by heating until at least partial fusion of the metal seal, is well known per se and therefore will not be not described in detail. As is known per se, to obtain a good connection between metallic elements, e.g. by soldering or brazing, it is preferable that these elements are not surface oxidized. To do this, either it is used, a deoxidizing material, or flux, in order to remove the oxide layer, or the metal elements are non-oxidizable. The getter 20 is usually made of high affinity materials with the main gas molecules capable of being emitted (degassed) by all the internal surfaces of the cavity 22 of the housing. In particular, the getter is chosen for adsorbing H2, N2, O2, H2O, and volatile carbon compounds (called organic compounds), for example CH4. The typical materials used for the getter are well known alloys based on elements Zr, Ti, Co, Fe, or Ba. The getter 20 is usually either in the form of sintered blocks, and fixed inside the cavity 22, or in the form of one or more thin layers deposited on slides, platelets or mineral substrates using techniques evaporation or sputtering, integrated in the cavity 22 during assembly of the component 16 in the housing 24.
    [0008] As is known per se, a getter used in this type of application needs to be activated to be able to adsorb the previously indicated gases, the activation consisting of a reactive conditioning of the surface of the getter by means of a cycle. thermal adapted practiced under vacuum. A getter 20 in the form of thin layers with a thickness of the order of one to a few micrometers generally requires a thermal activation cycle at a much lower temperature than a sintered getter. Thus, the known getters in thin layers can be activated by simply heating the device just described at a temperature between 350 ° C and 400 ° C once the sealed housing.
    [0009] The sintered getters require a temperature of the order of 800 ° C or more, so that a global heating of the sealed housing at this temperature would cause irreparable damage. Activation of a sintered getter is therefore performed by Joule effect by means of electrical connections provided for this purpose, which allows to heat substantially only the getter. The activation of such a getter, however, induces intense radiation may damage the bolometers. In addition, a thin-layer getter is usually preferred because it does not require any electrical connection accessible from outside the box. This character simplifies the architecture, so the manufacturing process, and thus reduces the cost of the box. Indeed, the connections passing through the base of the housing can pose hermeticity problems and induce significant design constraints due to the high intensities to be applied during activation to produce the necessary high temperatures. However, a thin-layer getter constrains the overall manufacturing process of the device, because the efficiency of the getter is even better than the activation temperature is high, although in a lower range as specified. In fact, it is always this particular step of thermal activation, performed globally on the entire device, which defines the maximum temperature point to which the electronic component is subjected during its manufacturing cycle. In other words, the complete design of the component, and generally all parts of the device, are in fact directly dependent on the characteristics of the thin-film getter used. SUMMARY OF THE INVENTION The object of the present invention is to solve the above-mentioned problem of excessive heating by proposing a method of manufacturing a device comprising a microelectronic component housed in a hermetic housing in which a low pressure is maintained using a getter that does not require a binding heat treatment.
    [0010] To this end, the subject of the invention is a method of manufacturing a device comprising a microelectronic component housed in a box formed of walls delimiting a sealed internal volume under vacuum, comprising: the production of a gas trap in the form of thin layers capable of trapping gas in said internal volume; pumping said internal volume; during said pumping, the heating of the device so as to degasify elements housed in said internal volume; and after said pumping, hermetically sealing the housing without using a flow.
    [0011] According to the invention: each constituent material of the device capable of degassing in the internal volume is a mineral material; the gas trap is capable of trapping substantially only hydrogen; and the heating of the device and the sealing of the housing are carried out at a temperature of less than 300 ° C., in particular a temperature of between 100 ° C. and 200 ° C. By "thin layer" is meant an element formed of one or more layers with a total thickness of less than 2 microns, each layer of which preferably has a thickness of between 0.1 and 1 micrometer. "Mineral" material means a metallic, ceramic or semiconductor material or any combination, assembly, alloy, dispersion of said materials together, preferably in a non-porous form. In this context, all materials in organic chemistry, ie carbon-based, are considered as non-mineral, with the exception specifically of forms of pure or combined carbon, combined or otherwise, dispersed or not with or in another mineral material. In particular, the carbonaceous polymers containing or not organic solvents at the base of the adhesives are considered as non-mineral materials.
    [0012] In other words, it is usually considered that, in the case of components sealed under high vacuum, the gases that must be adsorbed by the getter during the life cycle of the components are predominantly nitrogen, hydrogen, hydrogen, water vapor, and to a lesser extent carbon compounds, especially CO, CO2 and CH4. The presence of these gases considered systematic in greater or lesser amounts requires the use of gas trapping materials, or "getter", sufficiently reactive to all of them. This is why getter materials are usually constituted or contain zirconium or titanium, the latter being capable of trapping a large variety of gases.
    [0013] However, these metals are naturally "passive" on the surface, that is to say covered with a low permeability and / or low reactivity, including a layer of oxide or nitride. This passivation by oxygen or nitrogen is in practice inevitable after the development of the getter, because of its separate manufacture prior to the final integration into the box.
    [0014] As a result, an in situ reactivation of the getter surface is necessary to remove this surface layer and thus make the getter active, the activation being obtained under high vacuum and at temperatures above 300 ° C.
    [0015] However, the inventors have found that the partial pressures in the hermetic case of gases other than hydrogen can be controlled and controlled during sealing and during the life cycle of the device by means of special design and assembly techniques and precautions. . In practice, the inorganic materials generally have a gas degassing rate other than hydrogen sufficiently low, after heating under high vacuum, to be neglected in the pressure ranges considered in the context of the invention. More particularly, the sum of the partial off-hydrogen pressures obtained by the inventors, and this in a manner reproducible on several devices, in sealed packages under high vacuum is of the order of 10-5 mbar and evolved only negligibly at course of time after sealing the case. On the other hand, the inventors have noted that the hydrogen partial pressure is very fluctuating and likely to evolve over time once the case is hermetically sealed. The inventors have thus found that, contrary to the state of the art vacuum sealing of the boxes, the use of a getter only reactive with hydrogen makes it possible to reach the required level and pressure stability, typically order 10-4 mbar, taking simple special precautions.
    [0016] These particular precautions consist in particular, to use only for all the surfaces in relation to the cavity of the materials which degas not substantially any other gas, if necessary, that the hydrogen once the sealed box, and to implement a step of degassing by a moderate heating of the device before the sealing of the housing to release the internal surfaces of the cavity of possible contaminations such as O 2, H 2 O, N 2, Ar and most of the volatile molecules of nature or organic origin, that is to say ie containing carbon chemically bonded with hydrogen, nitrogen, oxygen, or a halogen such as fluorine or chlorine for example. Typically, all materials capable of degassing into the internal cavity are inorganic, preferably non-porous materials, and if they comprise carbon, the latter is in one or more of its solid forms. In this way, a very small amount of atmospheric and organic gases is ensured in the hermetic housing and the main source of pressure instability in the latter is inhibited by a hydrogen-only getter. However, the inventors have also found that by being much less constrained on the type of gas to be trapped, it is possible to use trapping materials that do not pass on the surface, in particular palladium. The absence of passivation avoids the need for activation by heating. As the device no longer needs to be subjected to temperatures higher than 300 ° C, its most sensitive elements, including the microelectronic component and its bolometric retina, are significantly less likely to thermally degrade their properties, a crucial point for the implementation of fragile structures or materials and / or thermally unstable.
    [0017] According to one embodiment, the gas trap is inert with respect to oxygen and / or nitrogen and / or methane, and preferably inert to these three elements. According to one embodiment: - the embodiment of the sealed housing comprises the production of lower walls and a hood (or infrared transparent window) upper; the realization of the gas trap comprises the production of a metal layer of hydrogen trapping material on the hood; - Carrying the cover on the lower walls with only a first portion of said trapping layer resting on the lower walls; - The realization of the gas trap with at least a second portion of said trapping layer not resting on the lower walls; and the application of a mechanical contact action, that is to say a compressive and / or friction force between the lower walls and the cover, and / or a heating of said trapping layer portion of so as to form without a flow supply a hermetic metal seal, in other words the seal, to practice without flow, between the cover and the lower walls. More particularly, the first part and the second part of said trapping layer form a single continuous pattern, or several discontinuous patterns, that is to say in at least two separate parts. Otherwise formulated, these two or more parts are related or disjoint. In other words, the hydrogen getter is formed or comprises a metal layer deposited on at least one of the walls of the hermetic housing and at least partially exposed to the internal atmosphere of the housing. More particularly, this layer is formed on the window of the box. This layer advantageously comprises two parts formed in a single operation, a first part being integrated into the assembly junction by soldering without flux of the box, and a second part being in direct interaction with the inside of the box and thus entering into the constitution of the getter. The brazing process is carried out without flux and when the assembly according to the invention is made in order to avoid the presence in the cavity, even in the form of traces, of one or more constituents of the solder flux. that would not achieve the desired level of vacuum. This layer may advantageously serve as fluxless solder interface material for sealing the case. Thus, the formation of at least a portion of the hydrogen getter necessary for the quality of the final vacuum, and at least a portion of the hermetic seal by means of a single manufacturing step simplifies the design of the device. and to limit the manufacturing cost of the latter, in particular the cost of manufacturing the window. More particularly, according to the state of the art, the metallization of the windows with noble metals for solderless soldering on the one hand, and the getter function on the other hand, are obtained independently by means of separate layers due to in particular different materials involved. The embodiment of the invention reduces the number of manufacturing steps, resulting in a reduction in manufacturing cost. According to one embodiment, the gas trap comprises a hydrogen scavenging material consisting of palladium or platinum, or a mixture or an alloy thereof. Palladium or platinum can simultaneously form a hydrogen trap, and a surface insensitive to passivation, especially by oxygen and nitrogen, suitable for the implementation of a fluxless solder. According to one embodiment, the gas trap comprises a layer of palladium or platinum with a thickness of between 100 nanometers and 1 micrometer. According to one embodiment, the gas pressure in the internal volume is less than 10 -4 mbar, and the electronic component is a bolometric detector.
    [0018] The invention also relates to the use of a gas trap trapping substantially only hydrogen to maintain a pressure level in a sealed housing in which is housed an electronic component. Advantageously, the gas trap comprises palladium or platinum for trapping hydrogen.
    [0019] The invention also relates to a device comprising: a vacuum sealed housing formed of walls defining an internal volume; a microelectronic component housed in the housing; and a gas trap housed in the internal volume, in which each constituent material of the device capable of degassing in the internal volume is a mineral material and in which the gas trap traps only hydrogen and advantageously comprises palladium or platinum to trap hydrogen.
    [0020] BRIEF DESCRIPTION OF THE FIGURES The invention will be better understood on reading the description which will follow, given solely by way of example, and made with reference to the appended drawings, in which like references designate identical or similar elements, and in which: - Figure 1 is a schematic sectional view of a bolometric detection device of the state of the art, already described above; FIG. 2 is a schematic view of the face facing the internal volume of a bolometric detector box window according to the invention; and - Figure 3 is a schematic sectional view of a device comprising a component encapsulated in a micro-housing. DETAILED DESCRIPTION OF THE INVENTION In the following examples of a method of manufacturing a hermetic package comprising a microelectronic component and a hydrogen trap are described. These examples are based on methods well known in the state of the art, modified to implement the invention. A) FIRST EXAMPLE OF EMBODY: SEALING THE HOUSING WITH EMPTYING OF THE HOUSING VIA A PUMPING QUEUSOT According to a method of the state of the art, the housings hermetically closed by a window transparent to the radiation of interest, usually made of silicon or germanium for infrared applications, are evacuated through a tube passing through a wall of the housing, called "queusot", for pumping the internal volume of the housing. The housing is typically formed of metal or metal-associating materials for the walls, bottom and hood, and glass and / or ceramic for the electrical passages formed in the walls, thereby forming a hermetically sealed enclosure once the mechanically sealed. More particularly, the window is carried on the side walls of the housing and secured thereto by brazing. For this purpose, a layer of metal brazing material is deposited on the window and / or the side walls of the housing and then a thermal and / or mechanical action is exerted to obtain the atomic diffusion / migration and / or the at least partial fusion of the solder material and thus obtain the hermetic seal of the window and side walls. In order to reach the desired vacuum level, the assembly is then heated to temperatures of the order of 100 ° C. to 200 ° C. in order to degas the internal surfaces of the housing while dynamically pumping said volume through the exhaust tube. This pumping step usually lasts between several hours and a few days depending on the desired vacuum level, the dimensions of the housing and the exhaust pipe, and the presence in the housing of charged elements or sources of various gases, for example organic nature, such as adhesives or polymers. At the end of the pumping step, the exhaust pipe, usually made of copper, is crushed and cut with a hydraulic clamp. This step is commonly known as "pinch off". Activation of the getter disposed inside the sealed housing is performed later in an additional step. According to this state of the art, the getter is usually a sintered getter which requires activation at high temperature, typically 800 ° C at least, electrically by Joule effect in order to heat only the getter itself.
    [0021] According to the invention, the sintered getter is replaced by a hydrogen-only getter that does not require activation, deposited on one of the constituents of the hermetic enclosure, for example on the base, one of the side walls of the housing, or on the face of the window in relation to the internal volume, or on a part of the window that does not interfere with the detection of a bolometric retina disposed in the housing. The getter comprises, as a gas-trapping material, a layer of noble metal capable of absorbing hydrogen by physisorption, with a thickness of between 100 nanometers and 1 micrometer. This layer is for example deposited on a metal blade, or "getter blade", previously brazed or spot welded on a metallized pad inside the box according to known techniques. There is no need according to the invention to protect the part intended for the soldered or welded assembly of the getter blade during the deposition of the gas trapping material on the blade, because the latter does not become passive once deposited. The production sequence of the blade is simplified and less expensive. Advantageously, the hydrogen scavenging material is also chosen to have qualities necessary for the subsequent implementation of solderless soldering, which is particularly the case of palladium, which is a noble metal. In doing so, this material is also used for sealing the window, which reduces the number of manufacturing steps. More particularly, the layer of solder material and the layer of hydrogen trapping material are produced on the window, outside the reserved zone of optical transparency, in a single deposition step, the thickness of the layer for soldering may or may not be different from the thickness of the layer for the getter. Said deposit thus comprises according to this variant: a first part, preferably at the extreme periphery of the window, for brazing without flux of said window on the side walls of the housing, with the possible intermediate support if necessary as is known; and a second connected or disjoined part of the first part, preferably at the inner periphery of the window, which will remain in direct relationship with the internal volume of the box once the sealed window, and intended to act as a getter. Advantageously, a stack of at least two layers is made to increase the mechanical strength of the getter and / or the solder material. The deposition comprises in particular the deposition of at least a first bonding layer whose function is to improve the mechanical cohesion between said metal stack and the surface on which the stack is made, followed by the deposition of at least one second layer constituting the material for trapping hydrogen. Thus on said surface, which corresponds to the getter blade or the window according to the modes described above, it is deposited a first layer of titanium or chromium hook, then a second layer of trapping material / solder is deposited on the layer traction. The thicknesses of deposited materials are of the order of 30 nm to 300 nm for the bonding layer (typically titanium or chromium) and 100 nm to 1 i.tm for the trapping material / solder.
    [0022] Referring to the view of the face facing the internal cavity of the window of Figure 2, the surface 32 of the window 18 carried on the inner walls of the housing comprises a metallization zone 34 made on the edge of the window , namely the window portion carried and sealed on the side walls of the housing, and a hydrogen getter zone 36 made outside said portion, for example in the form of a strip, the zones 34 and 36 being deposited when of a same deposition step on the surface 32. This deposit can be advantageously, but not necessarily, implemented during the collective manufacture of a plurality of windows, that is to say before the "singulation" or cutting, in unitary elements from a larger surface area window substrate, typically of standard microelectronic format (discs 100, 150, 200mm in diameter or more). Advantageously, the central portion 38 for transmitting the infrared radiation to the detection elements internal to the housing is protected by masking during the deposition of the metal zones 34, 36. Advantageously, to avoid the etching operations of the metal stack, the various parts of this layer are defined together for example according to the so-called technique "" or mechanical stencil ("shadow mask").
    [0023] In fact, the components assembled in this way have the required characteristics of initial quality and vacuum stability after the traditional pumping step - degassing through the exhaust pipe, as previously described.
    [0024] Preferably, the trapping / brazing material is palladium. This noble metal indeed has: the chemical absorption characteristics by physisorption of hydrogen. This metal can indeed absorb a large amount of hydrogen, as shown in the document Vacuum properties of palladium thin film coatings, C. Benvenuti et al., Vacuum 73 (2004) 139-144]; and the chemical characteristics suitable for soldering without flux because it is a non-oxidizable and non-nitrurable metal in contact with the atmosphere, in other words, which is not passive.
    [0025] The hydrogen getter proposed in the invention has the particular property of not requiring activation, since palladium is not passive by surface oxidation or nitriding when exposed to the atmosphere. Pumping of hydrogen by physisorption is active at any time, and reversible. The vacuum degassing step before rinsing also makes it possible to degas the hydrogen captured by this metal during its stay in the atmosphere. Thus, the process according to the invention is effective for maintaining a low hydrogen pressure in a vacuum box without the need for high temperature thermal activation or electrical activation characteristic of the getters usually used.
    [0026] To obtain the required vacuum level of less than 10-2 mbar, and preferably less than 10 -4 mbar, the cavity formed by the housing does not contain constituents of organic nature or origin, for example polymers or adhesives, which degass always and very sustainably large quantities, relative to the required level of vacuum, water vapor and volatile carbon compounds. The electronic component, or chip, housed in the housing, namely the integrated circuit carrying the sensitive detection structures and these structures themselves, for example microbolometric, is advantageously fixed by soldering without flux by means of metals. The preferred constitutive materials of all the elements capable of degassing in the box are therefore inorganic, in particular of a non-porous mineral nature, such typically and in a known and nonlimiting manner the mineral semiconductors (Si, Ge, etc.), the metals dense ceramics such as alumina (Al 2 O 3) or aluminum nitride (AlN), or the various forms of carbon, pure or chemically combined, for example in the form of carbides, as well as all the combinations, assemblies, alloys, dispersions of these materials between them in all proportions. B) SECOND EXAMPLE OF IMPLEMENTATION: SEALING OF THE HOUSING WITH EMPTYING OF THE HOUSING BY A METHOD OF COLLECTIVELY SEALING UNIT COMPONENTS Another state of the art relating to the hermetic sealing of microelectronic components, in particular microbolometric imaging components, proposes a collective sealing that does not use tubes to get the vacuum in the cavity of a box. According to the document FR 2 874 691 for example, it is possible to assemble discrete components collectively in a vacuum oven heated to a sufficient temperature for a period of time adapted to the level of vacuum required. As in the case of box pumping tubes queusot according to the invention, vacuum cavities contain substantially no organic material (polymers, adhesives) which degass excessively and too long for the implementation of the invention. The microelectronic component is in particular fixed by soldering without flux, in the box facing the infrared transparent window. The preferred constituent materials in the context of a collective sealing are similar to the embodiment previously described, in terms of getter and / or solder sealing of the window. In particular, the getter is deposited in a thin layer on a wall of the cavity. The housing used in the context of the invention does not require any specific technology other than those of the state of the art of hermetic seal under vacuum said secondary.
    [0027] Typically, the case will be metallic or ceramic and includes metallized beaches to receive the brazing, by transfer of the electronic component, then the window, covered with a layer of noble metal such as gold, to allow the implementation work of a solder without flux for the assembly of the component then of the window.
    [0028] The component comprises on the face fixed to the housing a layer of noble metal which is brazed without flux inside the housing according to a thermal cycle preferably separated from the degassing cycle and sealing of the housing, which allows in particular to form before sealing the connections wired between the component and the electrical bushings of the housing.
    [0029] The solder material used for the assemblies is preferably provided in the form of a metal preform, of composition defined by the desired melting temperature, and of a geometric shape adapted to the assembly need. For example, the component may be fixed to the housing by means of a conventional 80% - Sn 20% mass solder, the melting point of which at 280 ° C. is compatible with the choice of a conventional second preform. type SAC 305 (tin-silver-copper alloy) fusible at about 240 ° C for the solder seal between the window and the base of the housing according to the invention. The thickness of these preforms is moreover chosen to be sufficient to compensate for the flatness defects of these subassemblies placed face to face. A preform thickness between 20 and 1501.1m is especially chosen for this purpose. The window used is typically of identical manufacture to that proposed in the context of the first embodiment with tube queusot, that is to say in a unitary manner, but advantageously manufactured collectively, from large format substrates cut off. in unit windows after forming the localized functions of optical treatments on the surfaces intended to be transparent to the radiation, and the getter on at least a portion of the surfaces intended to remain opaque. The degassing and sealing are then in the same thermal cycle under high vacuum to reach the final pressure required in the component. The various elements of the housing, and in particular the window, are preferably pre-degassed prior to sealing the window in an oven under high vacuum, for example according to the methods described in document FR 0409055. However, it is not here useful according to the invention to degas / activate the element that carries the getter to the temperature normally required by the usual getters since there is no need for activation of the hydrogen getter made in a material insensitive to passivation. An alternative form of implementation of the invention in the case of collectively sealed boxes is to use a getter element in the form of a getter blade as described above. This blade is thus manufactured according to the principle of the invention by depositing a layer of hydrogen scavenging material, in particular a layer of palladium on a mineral support (typically metal or ceramic), and the blade is integrated by brazing without flux in the hermetic enclosure is before, for example concurrently at the step of fixing the microelectronic component, or during the final sealing cycle of the window on the walls of the housing. In this case the window may be a window according to the state of the art, or a window according to the invention on which the getter material also plays the role of brazing interface material as described above.
    [0030] C) THIRD EXAMPLE: COLLECTIVE SEALING ACCORDING TO THE "WAFER LEVEL PACKAGING" DILE APPROACH The invention is also applicable to the sealing of components, in particular bolometric at the substrate scale, according to the "wafer level packaging" technique. According to the state of the art, illustrated with reference to the schematic cross-sectional view of FIG. 3, a first transparent substrate 40, called a "window wafer" or "hood wafer", on which cavities 42 have been made, is assembled. sold by brazing, thermocompression or vacuum melting, to a second substrate 44, called a "chip wafer", which carries a plurality of microelectronic chips 46 each comprising, for example, a sensitive retina at the surface, each cavity 42 coming to cover each chip 46. These components Collectively realized also comprise in each cavity 42 a getter 50 to obtain a high vacuum so as to ensure their maximum performance.
    [0031] The nature of the brazing interface ensuring the tightness of the assembly of the components of the "wafer level packaging" type is generally different from that of the components made individually: the surface states and flatnesses of the wafers and chip wafers allow indeed significantly reduce the amounts of solder used compared to assemblies made individually on separate housings. Thus, the small thicknesses of brazing required allow the deposition of the brazing metal layers directly on the hood wafer and / or on the chip wafer. The deposition method is generally electrolytic and / or physical, for example by cathodic sputtering or evaporation. For the realization of solder metallizations, a technique consists in first depositing by physical processes ("sputtering" or evaporation), according to very thin thicknesses, a nucleation layer 52 (or "seed layer") on the reserved surfaces at the sealing interface, formed of a bonding layer and a layer of noble metal. The noble metal makes it possible to avoid the air passivation of the metal surfaces, so as to ensure the quality of the interfaces and the covering of the exposed surfaces in a second electrolytic growth step, intended for the selective deposition located at the exposed surfaces, of the material braze 54 proper on a higher thickness. Selective deposition makes it possible to limit the consumption of precious metals, such as gold, which is the usual constituent of solder material.
    [0032] Usually, the tie layer is made of titanium or chromium and has a thickness between 30 nm and 300 nm, and the layer of solder material, for example gold, has a thickness of between 100 nm and 500 nm. These layers are defined either by etching or by masking or by means of a "shadow mask" technique or stencil. The electrolytic layer, for example, is formed of gold with a thickness of between 1 μm and 5 μm, and tin with a thickness of between 1 μm and 5 μm. During the vacuum thermocompression sealing process, the gold and the tin inter-diffuse and then partially melt to form an alloy at least partly eutectic.
    [0033] In the context of the invention, the gold of the nucleation layer on at least one of the substrates (hood wafer or wafer chip) is replaced by palladium, which is deposited on a larger surface of a first substrate so that to form two related or disjunct areas. The first zone is intended to form or interface the solder joint with respect to the metallization of the second substrate, and the second zone facing the interior of each cavity, which remains free after sealing, that is to say in direct interaction with the atmosphere of the cavity, is intended to form the getter 50. In the case where it is preferred to form the solder layers on the substrate which also carries the getter, in order to avoid the electrolytic deposition of the solder layers in the second zones, the latter are preferably masked before the electrolysis operation by a photosensitive resin defined by photolithography. Thus, the zone not covered by the electrolytic deposit is used as a hydrogen getter in the assembly, without the need to provide this getter function by means of additional specific steps required according to the state of the art. It is thus realized a substantial economy of time, means and costs. D) FOURTH EXAMPLE: MONOLITHIC SEALING ON WAFER ACCORDING TO THE TECHNIQUE OF MICRO-ENCAPSULATION OR "PIXEL LEVEL PACKAGING" As part of the hermetic sealing known as the "Pixel Level Packaging" or "microcapping", each pixel or group of pixels of a bolometric retina is encapsulated in an individual hermetic box (or "microcapsule"), the boxes being made collectively by means of monolithic layers obtained by direct deposition of microelectronic type on a chip substrate. The detail of various embodiments is provided for example by the document US Pat. No. 6,753,526. According to this state of the art, in order to reach and maintain the required level of vacuum, a thin layer getter is constituted by a localized deposition of titanium in each hermetic cavity thus defined. In the case of the use of a temperature-activatable getter as described above, the solvents, resins and various aggressive processes, in particular oxidizing processes, used during the technological assembly of the sensitive microstructures and their cavities, alter the getter surface, or at least partially inhibit its properties of trapping gaseous molecules. This potentially results in the necessity, after sealing of the microcapsules, of a relatively high temperature thermal activation to regenerate its properties. In the context of the invention, this getter is substituted with a hydrogen getter, preferably consisting of at least two layers: on the one hand, a tie layer, the function of which is to achieve the mechanical cohesion between the hydrogen getter material and the substrate on which the getter is made, and - secondly a noble metal layer capable of absorbing hydrogen by physisorption, in particular a layer of palladium. In addition to these properties of insensitivity to passivation to the atmosphere, the interest of noble metal is that it resists traditional solvents and resins used for the construction of microstructures and their cavities without altering its surface. This metal therefore does not require any particular activation and functions as in the previous embodiments. The invention thus has several advantages.
    [0034] The invention makes it possible to deposit the hydrogen getter and the metallization for brazing without flux during the same step, which saves the price and the time of a complete method of depositing and structuring the getter. The cost saving provided by the invention is therefore very substantial.
    [0035] In addition, the titanium or zirconium-based getters usually used for secondary vacuum sealing require heating the components to temperatures necessarily above 300 ° C, or even more effectively at least 350 ° C. The budget or thermal range experienced by the microelectronic components at these temperatures can affect the physical characteristics of the most sensitive parts integrated in the case (typically microbolometers in the example followed) and therefore their performance, or even their functionality. The assembly method as well as the getter proposed by this invention make it possible to seal the delicate components at temperatures lower than that required by the state of the art, because the maximum temperature is imposed by the melting temperature of the product. alloy used for brazing without flux, and not the necessary activation of the getter. However, for traditional alloys compatible with flux-free solders, the sealing temperature range of the cases generally in the range of 150 ° C (alloys rich in indium) to 250 ° C (alloys rich in tin) is much lower than the activation temperatures of conventional getters. The maximum temperature experienced by the fragile components is thus significantly reduced, and this results in a greater latitude in the implementation of sensitive constructions that are less resistant than what is required by the state of the art, whereas the normal use of the component after manufacture does not require this level of high resistance. Higher performance sensitive constructions thus become producible thanks to the invention without any other complications. The palladium which is proposed preferentially because of its accessible cost and its advantageous characteristics, can possibly be replaced by platinum, (more expensive) as specified above. The brazing temperature of the window is constrained by the choice of the metal alloy of the solder, and no longer by the activation temperature of the getter, as for the assemblies generally practiced in the state of the art. In practice, one will go to solders having melting temperatures between 156 ° C (pure indium) and 280 ° C (Au80-Sn20) depending on the characteristics desired for the assembly.
    权利要求:
    Claims (3)
    [0001]
    REVENDICATIONS1. A method of manufacturing a device comprising a microelectronic component (16; 46) housed in a housing (24; 40; 44) formed of walls delimiting a vacuum-sealed internal volume (22; 42), comprising: - carrying out a gas trap (36; 50) in the form of thin layers capable of trapping gas in said internal volume; pumping said internal volume (22; 42); during said pumping, heating the device so as to degasify elements housed in said internal volume (22; 42); and after said pumping, hermetically sealing the housing (24; 40, 44) without using a flow; characterized in that: - each constituent material of the device capable of degassing in the internal volume (22; 42) is a mineral material; the gas trap (36; 50) is capable of trapping substantially only hydrogen; and the heating of the device and the sealing of the housing are carried out at a temperature below 300 ° C. 20
    [0002]
    2. Method according to claim 1, characterized in that the gas trap (36; 50) is inert with respect to oxygen and / or nitrogen and / or methane.
    [0003]
    3. Method according to claim 1 or 2, characterized in that: - the embodiment of the housing (24) comprises the production of lower walls (10) and an upper cover (18); - The realization of the gas trap comprises the production of a metal layer (36) of hydrogen trapping material on the cover (18); - the carryover of the cover (18) on the lower walls (10) with a first portion (34) only of said layer (34, 36) of metal trapping material resting on the lower walls (10); - Realizing the gas trap with at least a second portion (36) of said trapping layer not resting on the lower walls (10); and - applying a mechanical action on and / or heating said first portion (34) of the metal layer of entrapment material to form a hermetic seal between the cover (18) and the lower walls (10) .4. The method according to claim 3, characterized in that the first portion (34) and the at least second portion (36) of said metal layer of trapping material are related or disjointed. Process according to any one of the preceding claims, characterized in that the gas trap comprises a hydrogen scavenging material consisting of palladium or platinum. Process according to Claim 4, characterized in that the gas trap comprises a layer of palladium or platinum with a thickness of between 100 nanometers and 1 micrometer. Method according to one of the preceding claims, characterized in that the gas pressure in the internal volume (22; 42) is less than 10-4 mbar, and that the electronic component (16; 46) is a detector bolometer. Use of a gas trap trapping substantially only hydrogen to maintain a pressure level in a sealed housing in which is housed an electronic component. Use according to claim 8, wherein the gas trap comprises palladium or platinum for trapping hydrogen. Device comprising: - a housing (24; 40; 44) formed of walls delimiting a vacuum-sealed internal volume (22; 42); a microelectronic component (16; 46) housed in the housing (24; 40, 44); and - a gas trap (36; 50) housed in the internal volume (22; 42); characterized in that: - each constituent material of the device capable of degassing in the internal volume (22; 42) is a mineral material; and - the gas trap (36; 50) traps only hydrogen. Device according to claim 10, characterized in that the gas trap (36; 50) comprises palladium or platinum for trapping hydrogen.12. Device according to claim 10 or 11, characterized in that the microelectronic component (46) comprises at least one bolometric membrane suspended above a substrate.
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    同族专利:
    公开号 | 公开日
    EP3169625B1|2020-04-15|
    US9957154B2|2018-05-01|
    IL249701D0|2017-02-28|
    US20170137281A1|2017-05-18|
    FR3023974B1|2016-07-22|
    CA2953051A1|2016-01-21|
    IL249701A|2020-10-29|
    EP3169625A1|2017-05-24|
    CN106470938A|2017-03-01|
    KR20170029426A|2017-03-15|
    CN106470938B|2019-03-29|
    US10414647B2|2019-09-17|
    US20180215610A1|2018-08-02|
    WO2016009126A1|2016-01-21|
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    法律状态:
    2015-07-17| PLFP| Fee payment|Year of fee payment: 2 |
    2016-01-22| PLSC| Search report ready|Effective date: 20160122 |
    2016-08-01| PLFP| Fee payment|Year of fee payment: 3 |
    2017-07-21| PLFP| Fee payment|Year of fee payment: 4 |
    2018-07-28| PLFP| Fee payment|Year of fee payment: 5 |
    2019-07-23| PLFP| Fee payment|Year of fee payment: 6 |
    2020-07-27| PLFP| Fee payment|Year of fee payment: 7 |
    2021-07-29| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1456961A|FR3023974B1|2014-07-18|2014-07-18|METHOD FOR MANUFACTURING A DEVICE COMPRISING A VACUUM HERMETIC CASE AND A GETTER|FR1456961A| FR3023974B1|2014-07-18|2014-07-18|METHOD FOR MANUFACTURING A DEVICE COMPRISING A VACUUM HERMETIC CASE AND A GETTER|
    CN201580033794.4A| CN106470938B|2014-07-18|2015-07-07|Method for manufacturing the device including hermetically sealed vacuum casting and getter|
    CA2953051A| CA2953051A1|2014-07-18|2015-07-07|Method for manufacturing a device comprising a hermetically sealed vacuum housing and getter|
    EP15742378.1A| EP3169625B1|2014-07-18|2015-07-07|Method for manufacturing a device comprising a hermetically sealed vacuum housing and getter|
    US15/320,719| US9957154B2|2014-07-18|2015-07-07|Method for manufacturing a device comprising a hermetically sealed vacuum housing and getter|
    PCT/FR2015/051869| WO2016009126A1|2014-07-18|2015-07-07|Method for manufacturing a device comprising a hermetically sealed vacuum housing and getter|
    KR1020167035825A| KR20170029426A|2014-07-18|2015-07-07|Method for manufacturing a device comprising a hermetically sealed vacuum housing and getter|
    IL249701A| IL249701A|2014-07-18|2016-12-21|Method for manufacturing a device comprising a hermetically sealed vacuum housing and getter|
    US15/928,008| US10414647B2|2014-07-18|2018-03-21|Method for manufacturing a device comprising a hermetically sealed vacuum housing and getter|
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